parameter max. units v r cathode-to-anode voltage 600 v i f @ t c = 25c continuous forward current i f @ t c = 100c continuous forward current 25 i fsm single pulse forward current 225 i frm maximum repetitive forward current 100 i ar ? maximum repetitive avalanche current 2.0 p d @ t c = 25c maximum power dissipation 125 p d @ t c = 100c maximum power dissipation 50 t j operating junction and t stg storage temperature range pd -2.339 ? ultrafast recovery ? ultrasoft recovery ? very low i rrm ? very low q rr ? guaranteed avalanche ? specified at operating conditions benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count features description international rectifier's HFA25TB60 is a state of the art ultra fast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultra fast recovery time, the hexfred product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the hexfred HFA25TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ultrafast, soft recovery diode hexfred tm HFA25TB60 v r = 600v v f (typ.)* = 1.3v i f(av) = 25a q rr (typ.)= 112nc i rrm = 10a t rr (typ.) = 23ns di (rec)m /dt (typ.) = 250a/s absolute maximum ratings -55 to +150 w a c 4/2/97 * 125c to-220ac
HFA25TB60 parameter min. typ. max. units t lead ? lead temperature ???? ???? 300 c r q jc thermal resistance, junction to case ???? ???? 1.0 r q ja ? thermal resistance, junction to ambient ???? ???? 80 r q cs ? thermal resistance, case to heat sink ???? 0.5 ???? ???? 2.0 ???? g ???? 0.07 ???? (oz) 6.0 ???? 12 k g-cm 5.0 ???? 10 l bf?in parameter min. typ. max. units test conditions t rr reverse recovery time ??? 23 ??? i f = 1.0a, di f /dt = 200a/s, v r = 30v t rr1 ??? 50 75 ns t j = 25c t rr2 ??? 105 160 t j = 125c i f = 25a i rrm1 peak recovery current ??? 4.5 10 t j = 25c i rrm2 ??? 8.0 15 t j = 125c v r = 200v q rr1 reverse recovery charge ??? 112 375 t j = 25c q rr2 ??? 420 1200 t j = 125c di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ??? 250 ??? t j = 25c di (rec)m /dt2 during t b ??? 160 ??? t j = 125c parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 600 ??? ??? v i r = 100a ??? 1.3 1.7 i f = 25a ??? 1.5 2.0 v i f = 50a ??? 1.3 1.7 i f = 25a, t j = 125c ??? 1.5 20 v r = v r rated ??? 600 2000 t j = 125c, v r = 0.8 x v r rated d rated c t junction capacitance ??? 55 100 pf v r = 200v measured lead to lead 5mm from package body electrical characteristics @ t j = 25c (unless otherwise specified) dynamic recovery characteristics @ t j = 25c (unless otherwise specified) a/s nc a l s series inductance ??? 8.0 ??? nh see fig. 3 see fig. 2 see fig. 1 thermal - mechanical characteristics see fig. 5, 6 & 16 see fig. 7& 8 see fig. 9 & 10 see fig. 11 & 12 k/w v fm max forward voltage a max reverse leakage current i rm wt weight mounting torque ? l=100h, duty cycle limited by max t j ? 0.063 in. from case (1.6mm) for 10 sec ? typical socket mount ? mounting surface, flat, smooth and greased
HFA25TB60 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig. 4 - maximum thermal impedance z thjc characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - maximum forward voltage drop vs. instantaneous forward current 1 10 100 0.6 1.0 1.4 1.8 2.2 2.6 fm t = 150 c t = 125c t = 25c j j j a forward voltage drop - v (v) 0.01 0.1 1 10 100 1000 10000 0 100 200 300 400 500 600 r t = 150 c a t = 125c t = 25c j j j reverse voltage - v (v) 10 100 1000 1 10 100 1000 t = 25 c j reverse voltage - v (v) r a a instantaneous forward current - i f (a) reverse current - i r (a) junction capacitance -c t (pf)
HFA25TB60 fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 5 - typical reverse recovery vs. di f /dt fig. 6 - typical recovery current vs. di f /dt 0 5 10 15 20 25 30 100 1000 f di /dt - (a/ s) a i = 50a i = 25a i = 10a v = 200v t = 125 c t = 25c r j j f f f 20 40 60 80 100 120 140 100 1000 f di /dt - (a/ s) a i = 50a i = 25a i = 10a f f f v = 200v t = 125 c t = 25c r j j 100 1000 10000 100 1000 f di /dt - (a/ s) a i = 50a i = 25a i = 10a f f f v = 200v t = 125 c t = 25c r j j 0 200 400 600 800 1000 1200 1400 100 1000 f di /dt - (a/ s) a i = 50a i = 25a i = 10a v = 200v t = 125 c t = 25c r j j f f f trr- (nc) irr- ( a) qrr- (nc) di (rec) m/dt- (a /s)
HFA25TB60 4. q rr - area under curve defined by t rr and i rrm t rr x i rrm q rr = 2 5. di (rec)m /dt - peak rate of change of current during t b portion of t rr v (aval) r(r at ed) i l(pk) v de cay time fig. 11 - avalanche test circuit and waveforms fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f 1. di f /dt - rate of change of current through zero crossing 2. i rrm - peak reverse recovery current 3. trr - reverse recovery time measured from zero crossing point of negative going i f to point where a line passing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current reverse recovery circuit irfp250 d.u.t. l = 70 h v = 200v r 0.01 w g d s dif/dt adjust current monitor high-speed switch dut rg = 25 ohm + free-w heel diode vd = 50v l = 100 h
HFA25TB60 world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 4/97 conforms to jedec outline to-220ac dimensions in millimeters and inches
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